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Si4465ADY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.45
- 1.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 8 V, V GS = 0 V
V DS = - 8 V, V GS = 0 V, T J = 55 °C
V DS ≥ ? 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 14 A
- 20
0.0075
± 100
-1
-5
0.009
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 12 A
0.0092
0.011
Ω
V GS = 1.8 V, I D = 10 A
0.013
0.016
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 14 A
58
S
Diode Forward Voltage a
V SD
I S = - 2.1 A, V GS = 0 V
- 0.57
- 1.2
V
Dynamic b
Total Gate Charge
Q g
55
85
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = - 4 V, V GS = - 4.5 V, I D = - 14 A
6
10
nC
Gate Resistance
Turn-On Delay Time
R g
t d(on)
2.5
33
3.8
50
Ω
Rise Time
t r
V DD = - 4 V, R L = 4 Ω
170
255
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t d(off)
t f
t rr
Q rr
I D ? - 10 A, V GEN = - 4.5 V, R g = 6 Ω
I F = - 2.1 A, dI/dt = 100 A/μs
168
112
85
81
255
170
130
125
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
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